Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
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چکیده
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2018
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1123/1/012046